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| SLD-68HF1 Planar Photodiode Features * Low capacitance, fast switching time * Low leakage current * Linear response vs irradiance * Hermetic package with flat window * Multiple dark current ranges available Description This small area planar, passivated silicon photodetector is designed to operate in either photovoltaic or reverse bias mode. It provides excellent linearity in output signal versus light intensity. Low dark current and low capacitance makes it the ideal detector for fast rise time applications. Absolute Maximum Ratings Storage Temperature Operating Temperature Soldering Temperature (3) Cathode 0.8 3.9 0.41 - 0.48 o 5.3 (Common to case) 4.7 2.54 25 min. Chip Size = 1.7 mm X 1.7 mm Active Area = 2.0 sq.mm. Anode 45 Dimensions in mm. Tolerance +/-0.13 Directional Sensitivity Characteristics 50 40 30 20 10 1.0 .8 Half Angle = 35 -40C to +125C -40C to +125C 260C 60 .6 70 80 90 .4 .2 0 Notes: (1) Ee = light source @ 2854 K (2) Ee = light source @ = 880 nm (3) >2 mm from case for < 5 sec. 100 1.0 .8 .6 .4 0 20 40 60 80 100 120 Electrical Characteristics (TA=25C unless otherwise noted) Symbol Parameter MIN TYP ISC Short Circuit Current 110 130 VOC Open Circuit Voltage 0.40 ID Reverse Dark Current: SLD-68HF1A SLD-68HF1B SLD-68HF1C SLD-68HF1D SLD-68HF1E CJ Junction Capacitance 40 tR Rise Time 1.0 tF Fall Time 1.5 TCI Temp. Coef., ISC +0.2 VBR Reverse Breakdown Voltage 50 Maximum Sensitivity Wavelength 950 P Sensitivity Spectral Range 400 R Acceptance Half Angle 35 1/2 Specifications subject to change without notice MAX UNITS TEST CONDITIONS 2 VR=0V, Ee=25mW/cm (1) A 2 V Ee=25mw/cm (1) nA nA nA nA pA pF s s %/C V nm nm deg VR=100mV, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=5V, Ee=0 VR=0, Ee=0, f=1MHz VR=10V, RL=1k (2) VR=10V, RL=1k (2) (1) IR=100A 100 100 10 1 250 1100 (off center-line) 102537 REV 1 5200 St. Patrick St., Montreal Que., H4E 4N9, Canada Tel: 514-768-8000 Fax: 514-768-8889 QF-84 The Old Railway, Princes Street Ulverston, Cumbria, LA12 7NQ, UK Tel: 01 229 581 551 Fax: 01 229 581 554 |
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